CS300N04A0 mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤2.0 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
l BLDC.
The
package form is TO-263, which accords with the RoHS standard.
40 V 300 A 120 A 271.7 W 1.6 mΩ
Features：
l Fast S.
CS300N04 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS ID（Silicon limited curren.
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